Abstract

The microstructural and ferroelectric properties of bulk Ba1-x SrxTiO3 and thin films prepared by excimer pulsed láser deposition on SiO2/c-Si, and Pt/ Ti/SiO2/c-Si are reponed in ibis work. The films were amorphous in the as-deposited condition and randomly crystallized after post-annealing at 550°C. The x-ray diffraction patterns of the films and the abla­tion target match exactly indicating that excellent stoichiometry preservation is attained by pulsed laser deposition. Smooth and uniform films showing few cracked areas were obtained on SiO2/c-Si substrates. while films deposited on Pt/ Ti/SiO2/c-Si substrates presented wider cracks that were promoted during the annealing process due to the thermal expansión mismatch between the films and the Pt coated sub­strates. The Curie temperature of the films was around -3l°C with a máximum dielectric constant of 180.