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Affiliations
R. Ávila-Godoy
Universidad de los Andes, Laboratorio de Análisis Químico Estructural de Materiales, Mérida, 5101, Venezuela
D. Acosta-Najarro
Affiliation not stated
G. Camargo-E
Affiliation not stated
C. Magaña-Zavala
Affiliation not stated
L. Nieves
Affiliation not stated
S. Paredes-Dugarte
Affiliation not stated
B. Hidalgo-Prada
Affiliation not stated
How to Cite
Structural Characterization of the Layered Compound Ag2SnSe3 from Scanning and Transmission Electron Microscopy and Synchrotron Powder Diffraction
- R. Ávila-Godoy ,
- D. Acosta-Najarro ,
- G. Camargo-E ,
- C. Magaña-Zavala ,
- L. Nieves ,
- S. Paredes-Dugarte ,
- B. Hidalgo-Prada
Vol 27 No 2 (2018)
Published: Jul 2, 2018
Abstract
In this paper, a study of structural characterization of the ternary semiconductor Ag2SnSe3 is presented. The experimental work was performed using Scanning Electron Microscopy (SEM), Selected Area Electron Diffraction (SAED) patterns, High Resolution Electron Microscopy (HREM), Annular Dark field imaging (ADF), and powder synchrotron X-ray Diffraction techniques. It was found that the semiconductor compound Ag2SnSe3 crystallizes in the monoclinic space group P2/m with cell parameters a = 7.977 Å, b = 7.912 Å, c = 13.023 Å, β = 101.734°, V = 804.79 Å3.